Kerry J Abrams
Kerry is a PhD student studying the reduction in density in polycrystalline silicon by the introduction of porosity through the inclusion of voids via He implantation and annealing of the poly-Si in order to tailor the resonant frequency of cantilever structures for MEMS technology. The voids are then characterised by TEM. This work is done in collaboration with the Scottish Microelectronics Centre, Univeristy of Poitiers and University of Tours, France.
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Publications
A transmission electron microscopy study of porous silicon